1. Which of the following best describes a P-N junction diode in reverse bias? A. The current is zero until breakdown B. The current flows freely C. The depletion region shrinks D. The diode behaves like a conductor
2. A P-N junction diode exhibits rectification properties due to the presence of: A. Holes only B. Free electrons only C. Both free electrons and holes D. Depletion region only
3. The main characteristic of an N-channel MOSFET is that: A. The gate controls the flow of current between source and drain B. The gate is used to control the base current C. The source terminal controls the drain current D. The drain current is constant regardless of gate voltage
4. The primary purpose of a semiconductor diode is: A. To amplify current B. To rectify current C. To regulate voltage D. To generate current
5. In a transistor, the current flow from the collector to the emitter is controlled by: A. Base current B. Collector current C. Emitter current D. Voltage drop across the collector
6. Which of the following is the symbol for a P-type semiconductor material? A. A circle with a plus sign inside B. A circle with a minus sign inside C. A circle with a cross sign inside D. A circle with a horizontal line through it
7. The energy gap between the valence band and conduction band in semiconductors is called: A. Conductance band B. Energy band gap C. Forbidden zone D. Valence band gap
8. The bandgap energy of a typical semiconductor material is around: A. 1 eV B. 10 eV C. 0.1 eV D. 3 eV
9. Which type of semiconductor is formed by doping silicon with elements like phosphorus? A. N-type B. P-type C. Intrinsic D. Superconductor
10. The majority carriers in a P-type semiconductor are: A. Electrons B. Protons C. Holes D. Neutrons
11. A transistor is a: A. Three-terminal device B. Two-terminal device C. Five-terminal device D. Four-terminal device
12. Which of the following properties is true for an ideal diode in forward bias? A. It behaves like a short circuit B. It has infinite resistance C. It exhibits reverse leakage current D. It has a high voltage drop
13. The output characteristic curve of a transistor in the common-emitter configuration shows: A. The relationship between input voltage and output current B. The relationship between output voltage and output current C. The relationship between input current and output voltage D. The relationship between output current and output voltage
14. In a semiconductor, the electrons in the conduction band are: A. Bound to the nucleus B. Free to move C. In the process of recombination D. In the process of ionization
15. Which of the following properties are true for a semiconductor diode? A. It allows current to flow easily in both directions B. It allows current to flow easily in one direction only C. It has infinite resistance in both directions D. It can conduct current in any condition
17. Which type of semiconductor material is formed by doping silicon with an element like boron? A. N-type B. P-type C. Intrinsic D. Superconductor
18. The function of the base of a transistor is to: A. Provide the path for the output current B. Control the flow of current between the collector and emitter C. Act as an insulator D. Supply the input power
19. In an NPN transistor, the emitter current is the sum of which two currents? A. Base current and collector current B. Collector current and base current C. Base current and output current D. Base current and emitter current
20. Which of the following is used to protect semiconductor devices from overvoltage conditions? A. Zener diode B. Light-emitting diode C. Photodiode D. Light detector
21. In a P-N junction, the energy band gap represents: A. The voltage drop across the junction B. The region where free electrons and holes recombine C. The range of energies that electrons cannot have D. The range of energies that electrons can have
22. Which of the following is true about a transistor in the active region? A. The collector current is controlled by the base current B. The base current is controlled by the emitter current C. The collector current is equal to the emitter current D. The transistor does not amplify the signal
23. The ideal diode model assumes that the diode has: A. Infinite resistance in reverse bias and zero resistance in forward bias B. Zero resistance in both directions C. Finite resistance in forward bias and reverse bias D. Infinite resistance in both directions
24. Which of the following is a feature of a Field-Effect Transistor (FET)? A. It uses current to control current B. It uses voltage to control current C. It has low input impedance D. It requires a significant input current to operate
25. In a Zener diode, the breakdown voltage is the voltage at which: A. The diode starts conducting in the forward direction B. The diode starts conducting in the reverse direction C. The diode does not conduct any current D. The diode loses all its charge
26. Which of the following is the correct order of increasing conductivity for semiconductor materials? A. Insulators < Semiconductors < Conductors B. Conductors < Semiconductors < Insulators C. Semiconductors < Insulators < Conductors D. Insulators < Conductors < Semiconductors
27. In a semiconductor, the conductivity increases with: A. Increase in temperature B. Decrease in temperature C. Increase in impurity concentration D. All of the above
28. Which of the following describes the operation of a Schottky diode? A. It uses a metal-semiconductor junction instead of a P-N junction B. It operates only in reverse bias C. It is mainly used for voltage regulation D. It has a higher breakdown voltage than regular diodes
29. In a P-N junction, when forward biased, the depletion region: A. Becomes wider B. Becomes narrower C. Does not change D. Becomes non-existent
30. A transistor in common-emitter configuration has a gain of 50. If the input current is 1 mA, the output current will be: A. 50 mA B. 100 mA C. 5 mA D. 0.02 mA
31. The current gain (β) of a transistor is the ratio of the: A. Base current to the collector current B. Collector current to the base current C. Emitter current to the collector current D. Collector current to the emitter current
32. In a diode, the depletion region width: A. Increases with forward bias B. Decreases with forward bias C. Does not change with bias D. Increases with reverse bias
33. The P-type semiconductor is created by doping an element with: A. More electrons than protons B. More holes than electrons C. An excess of electrons D. An excess of protons
34. In an NPN transistor, the current flow from the emitter to the collector is controlled by the: A. Base current B. Collector current C. Emitter current D. Emitter voltage
35. Which of the following is true for a Zener diode? A. It allows current to flow in both directions B. It is specifically designed for reverse bias operation and voltage regulation C. It can only work in forward bias D. It has a low forward voltage drop
36. In a semiconductor, the presence of free electrons and holes makes it: A. A conductor B. An insulator C. A dielectric material D. A semiconductor
37. Which of the following is a primary application of a Schottky diode? A. Rectification B. Voltage regulation C. High-speed switching D. Power amplification
38. In a P-type semiconductor, which of the following is the majority charge carrier? A. Electrons B. Holes C. Neutrons D. Protons
39. A typical P-N junction diode exhibits which type of behavior? A. Amplifying B. Switching C. Rectifying D. Modulating
40. The main advantage of MOSFETs over BJTs is their: A. Lower input impedance B. Higher current handling capability C. Higher input current requirement D. Higher frequency response
41. Which of the following is used to measure the voltage drop across a diode? A. Voltmeter B. Ammeter C. Oscilloscope D. Wattmeter
42. The reverse bias in a diode causes: A. The depletion region to widen B. The diode to conduct current easily C. The P-type region to become positive D. The N-type region to become negative
43. The reverse breakdown voltage of a Zener diode is controlled by: A. The doping level of the diode B. The temperature C. The size of the diode D. The forward current applied
44. Which of the following semiconductor materials is most commonly used in the manufacturing of solar cells? A. Copper B. Silicon C. Iron D. Aluminum
45. The region around the P-N junction where mobile charge carriers are depleted is called the: A. Conduction region B. Depletion region C. Convergence region D. Activation region
46. The output characteristics of a transistor in the common-emitter configuration show: A. The relationship between the input and output voltage B. The relationship between the output current and the input voltage C. The relationship between output current and output voltage D. The relationship between output current and collector-emitter voltage
47. A common use of the Zener diode is: A. Voltage regulation B. Signal amplification C. Rectification D. Oscillation
48. Which of the following devices uses a charge-storage principle to control current flow? A. BJT B. FET C. MOSFET D. Thyristor
49. A Zener diode is commonly used in: A. Switching circuits B. Rectification circuits C. Voltage regulation circuits D. Amplification circuits
50. In a transistor, the collector current is: A. Independent of the emitter current B. Dependent on the emitter current C. Dependent on the base current D. Dependent on the collector-emitter voltage